دیتاشیت STF15N60M2-EP
مشخصات دیتاشیت
| نام دیتاشیت | STF(I)15N60M2-EP |
|---|---|
| حجم فایل | 508.608 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 15 |
دانلود دیتاشیت STF(I)15N60M2-EP |
STF(I)15N60M2-EP Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STF15N60M2-EP
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 25W
- Total Gate Charge (Qg@Vgs): 17nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 590pF@100V
- Continuous Drain Current (Id): 11A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 1.1pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 340mΩ@10V,5.5A
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: MDmesh™ M2-EP
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
- Base Part Number: STF15
- detail: N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP
